Scanning tunneling microscopy and spectroscopy simulations of the silicon (111)-(7x7) surface

Abstract

Since 1982, the Si (111)-(7x7) surface has been extensively studied both theoretically and experimentally with the modern powerful tools of STM and Scanning Tunneling Spectroscopy (STS). In this work, a simple atomic orbital model for the Si (111)-(7x7) surface is developed to simulate the experimental results of STM and STS. Based on Tersoff-Hamann’s theory for the tunneling current, simulations of clean Si (111)-(7x7) constant-current images are presented. The direct, real-space simulated topographic images of the surface are compared to experimental results qualitatively and quantitatively. The simulation of spectroscopic imaging and normalized conductance spectra are also included. The adsorption of atomic hydrogen atoms onto the Si (111)-(7x7) surface is also simulated.