Scanning tunneling microscopy and spectroscopy simulations of the silicon (111)-(7x7) surface

dc.contributor.authorLiu, Weiming
dc.contributor.authorUniversity of Lethbridge. Faculty of Arts and Science
dc.contributor.supervisorPatitsas, Steve
dc.date.accessioned2007-11-29T21:25:45Z
dc.date.available2007-11-29T21:25:45Z
dc.date.issued2006
dc.degree.levelMasters
dc.descriptionxiv, 146 leaves ; 29 cm.en
dc.description.abstractSince 1982, the Si (111)-(7x7) surface has been extensively studied both theoretically and experimentally with the modern powerful tools of STM and Scanning Tunneling Spectroscopy (STS). In this work, a simple atomic orbital model for the Si (111)-(7x7) surface is developed to simulate the experimental results of STM and STS. Based on Tersoff-Hamann’s theory for the tunneling current, simulations of clean Si (111)-(7x7) constant-current images are presented. The direct, real-space simulated topographic images of the surface are compared to experimental results qualitatively and quantitatively. The simulation of spectroscopic imaging and normalized conductance spectra are also included. The adsorption of atomic hydrogen atoms onto the Si (111)-(7x7) surface is also simulated.en
dc.identifier.urihttps://hdl.handle.net/10133/543
dc.language.isoen_USen
dc.publisherLethbridge, Alta. : University of Lethbridge, Faculty of Arts and Science, 2006en
dc.publisher.departmentDepartment of Physicsen
dc.publisher.facultyFaculty of Arts and Scienceen
dc.relation.ispartofseriesThesis (University of Lethbridge. Faculty of Arts and Science)en
dc.subjectDissertations, Academicen
dc.subjectScanning tunneling microscopyen
dc.subjectSilicon -- Surfacesen
dc.subjectSurfaces (Physics) -- Researchen
dc.subjectAtomic hydrogen -- Absorption and adsorptionen
dc.titleScanning tunneling microscopy and spectroscopy simulations of the silicon (111)-(7x7) surfaceen
dc.typeThesisen
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